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ZXMN6A08E6
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
Symbol
V DSS
V GS
Value
60
± 20
3.5
Unit
V
V
Continuous Drain Current
V GS = 10V
T A = +70°C (Note 6)
I D
2.8
A
(Note 5)
2.8
Pulsed Drain Current
V GS = 10V
(Note 7)
I DM
16
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
(Note 7)
I S
I SM
2.6
16
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
R θ JA
T J , T STG
1.1
8.8
1.7
13.6
113
73
-55 to +150
W
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6
Document Number DS33376 Rev. 7 - 2
2 of 8
www.diodes.com
December 2013
? Diodes Incorporated
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